8吋N型SiC晶體 8'' N-Type SiC crystal

永泉晶圓位於海外的工廠成功長出8吋SiC 晶體，突破了8吋籽晶粘接、擴徑生長、應力控制等核心技術，最終成功研發製出8吋晶體。

而在加工關鍵工藝技術上，我們也突破重重關卡成功加工出8吋單晶襯底晶體直徑達到210mm，厚度大於25mm。

Yongquan Wafer rolled with the punches and successfully manufactured 8” SiC crystal in oversea factory .

We successfully processed diameter reaches 210mm, thickness is greater than 25mm of 8”SiC Single Crystal Substrate.