6&8吋N型 4H-SiC wafers (Substrate)                                     

Production Grade 

Diameter

150.25±0.2mm
200.25±0.2mm

Thickness

350±25μm
500±25μm

 

Resistivity 0.015~0.025ohm·cm
Micro-pipe Density ≤0.5ea/cm2

LTV

≤3μm(5mm*5mm)
TTV ≤5μm
Bow

-15~15μm

Warp
≤20μm
 

Roughness

≤0.2nm(5μm*5μm)

  

Research & Dummy Grade is also available.

Please consult to your sales.