6&8吋N型 4H-SiC wafers (Substrate)                                     

Production Grade 

Diameter	150.25±0.2mm 200.25±0.2mm
Thickness	350±25μm 500±25μm
Resistivity	0.015~0.025ohm·cm
Micro-pipe Density	≤0.5ea/cm2
LTV	≤3μm(5mm*5mm)
TTV	≤5μm
Bow	-15~15μm
Warp	≤20μm
Roughness	≤0.2nm（5μm*5μm）

Research & Dummy Grade is also available.

Please consult to your sales.