6&8吋高純半絕緣 4H-SiC wafer (Substrate)                                    

Production Grade 

Diameter

150.25±0.2mm
200.25±0.2mm

Thickness

500±25μm

Primary flat orientation

[1-100]±5° or Notch

Resistivity

≥1E8ohm·cm

Micro-pipe Density

≤0.5ea/cm2

LTV

≤3μm(5mm*5mm)

TTV

≤5μm

Bow

-15μm~15μm

Warp

≤20μm

Roughness

≤0.2nm(5μm*5μm)

  

Research & Dummy Grade is also available. 
Please consult to your sales.